IRFP4668PBF Trans MOSFET N-CH 200V, 130A 3-Pin
BD 6.000
The IRFP4668PBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Enhanced body diode dV/dt and dI/dt capability
- Fully characterized capacitance and avalanche SOA
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of ±30V
- On resistance Rds(on) of 8mohm at Vgs 10V
- Power dissipation Pd of 520W at 25°C
- Operating junction temperature range from -55°C to 175°C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Max Processing Temp | 260 | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 200 V | |
| Maximum Gate Source Voltage | ±30 V | |
| Mounting | Through Hole | |
| MSL Level | MSL 1 - Unlimited | |
| Operating Temperature | -55 to 175 °C | |
| Product Dimensions | 15.87 x 5.31 x 20.7 mm | |
| RDS-on | 9.7@10V mOhm | |
| Supplier Package | TO-247AC | |
| Typical Fall Time | 74 ns | |
| Typical Rise Time | 105 ns | |
| Typical Turn-Off Delay Time | 64 ns | |
| Typical Turn-On Delay Time | 41 ns | |
| Voltage | 600 |