STP80NF55-08 N-CH MOSFET 80A, 55V
BD 2.000
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Application
■ Switching applications
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Mounting | Through Hole | |
| Operating Temperature | -55 to 175 °C | |
| Product Dimensions | 10.4 x 4.6 x 9.15 mm | |
| RDS-on | 8@10V mOhm | |
| Supplier Package | TO-220 | |
| Typical Fall Time | 35 ns | |
| Typical Rise Time | 110 ns | |
| Typical Turn-Off Delay Time | 75 ns | |
| Typical Turn-On Delay Time | 20 ns | |
| Voltage | 600 |