BSP296 Small-Signal Transistor (smd)
BD 1.200
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Technical data
| Type | BSP296 |
|---|---|
| Enclosure | TO 261 4 |
| Manufacturer | Infineon Technologies |
| Manuf. Code | INF |
| Type | N-channel |
| I(d) | 1.2 A |
| UBR DSS | 100 V |
| Ptot | 1.8 W |
| RDS(on) | 600 mΩ |
| R(DS)(on) reference current | 1.2 A |
| R(DS)(on) reference voltage | 10 V |
|---|---|
| U(GS)(th) max. | 1.8 V |
| U(GS)(th) reference current (max.) | 100 µA |
| Q(G) | 6.7 nC |
| Q(G) reference voltage | 10 V |
| C(ISS) | 152.7 pF |
| C(ISS) reference voltage | 25 V |
| Operating temperature (min.) | -55 °C |
| Mounting type | Surface-mount |
| Series | OptiMOS™ |
| Max. operating temperature | +150 °C |
| Transistor property | Logic level gate |
| U(DSS) | 100 V |
| Channels | 1 |
| Type | N channel |
| UDS | 100 V |
| Product type | MOSFET |
Choose Quantity