MJE3055T (General Purpose Transistor, NPN, 60V, 2MHz, 75W, 10A)
BD 2.000
The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
- DC current gain specified to 10A
- High current gain - bandwidth
- 70VDC Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
- 6ADC Base current (IB)
- 1.67°C/W Thermal resistance, junction to case
Applications
Industrial
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Product Details
Characteristics of the MJE3055T bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 60 V
- Collector-Base Voltage: 70 V
- Emitter-Base Voltage: 5 V
- Collector Current: 10 A
- Collector Dissipation - 75 W
- DC Current Gain (hfe) - 20 to 100
- Transition Frequency - 2 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-220
- Pb-Free Packages are Available (MJE3055TG)