2N3391A (Bipolar Junction Transistor (BJT) NPN 25V 500mA 625mW)
BD 0.800
Bipolar Junction Transistor (BJT) NPN 25V 500mA 625mW TO-92-3
Characteristics of the 2N3391A bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 25 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 250 to 500
- Noise Figure - 5 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-92
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Product Details
Technical Specifications
National Semiconductor 2N3391A technical specifications, attributes, and parameters.
| Physical | |
|---|---|
| Case/Package | TO-92 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Technical | |
| Collector Base Voltage (VCBO) | 25 V |
| Collector Emitter Breakdown Voltage | 25 V |
| Collector Emitter Voltage (VCEO) | 25 V |
| Current Rating | 500 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 250 |
| Max Collector Current | 500 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 625 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Voltage Rating (DC) | 25 V |
| Compliance | |
| Lead Free | Lead Free |
| RoHS | Compliant |