2N5089 (NPN Transistor)
BD 0.800
Characteristics of the 2N5089 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 3 V
- Collector Current: 0.05 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 400 to 1200
- Transition Frequency - 50 MHz
- Noise Figure - 2 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-92
- These Devices are Pb-Free and are RoHS Compliant
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