IRF9Z34N Transistor MOSFET P-Chanel, 55V, 19A
BD 4.000
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- Lead-Free
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Max Processing Temp | 260 | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 55 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Mounting | Through Hole | |
| MSL Level | MSL 1 - Unlimited | |
| Operating Temperature | -55 to 175 °C | |
| Product Dimensions | 10.67 x 4.83 x 9.02 mm | |
| RDS-on | 100@10V mOhm | |
| Supplier Package | TO-220AB | |
| Typical Fall Time | 41 ns | |
| Typical Rise Time | 55 ns | |
| Typical Turn-Off Delay Time | 30 ns | |
| Typical Turn-On Delay Time | 13 ns | |
| Voltage | 600 |