IRF3415 (N-CH MOSFET 150V, 43A, 200W)
BD 3.000
Charactiristics IRF3415 MOSFET transistor
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 42.000 Ohm
- Continuous Drain Current: 43 A
- Total Gate Charge: 133.3 nC
- Power Dissipation: 200 W
- Package: TO-220AB
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