MJE2955T (COMPLEMENTARY SILICON POWER TRANSISTORS)
BD 2.000
The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Complementary to the MJE3055T
- Well-controlled hFE parameter for increased reliability
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Product Details
Type Designator: MJE2955T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -