BC328 (PNP Bipolar Transistor)
BD 0.800
PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC327 and BC338 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18.
Characteristics of the BC328 bipolar transistor
- Type - PNP
- Collector-Emitter Voltage: -25 V
- Collector-Base Voltage: -30 V
- Emitter-Base Voltage: -5 V
- Collector Current: -0.8 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 100 to 630
- Transition Frequency - 100 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-92
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Product Details
Technical Specifications
ON Semiconductor BC328 technical specifications, attributes, and parameters.
| Physical | |
|---|---|
| Case/Package | TO-92 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Technical | |
| Collector Emitter Breakdown Voltage | 25 V |
| Collector Emitter Voltage (VCEO) | 25 V |
| Current Rating | -800 A |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| hFE Min | 100 |
| Max Collector Current | 800 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 625 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Transition Frequency | 100 MHz |
| Voltage Rating (DC) | -30 V |
| Compliance | |
| Lead Free | Lead Free |
| RoHS | Compliant |