19NC60 Transistor IGBT Chip N-Chanel, 600V, 42A
BD 5.000
These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Features:-
• Low on-voltage drop (VCE(sat))
• Very soft ultrafast recovery anti-parallel diode
Applications:-
• High frequency motor drives
• SMPS and PFC in both hard switch and resonant topologies
Choose Quantity
Product Details
Specification:-
| Symbol | Parameter | Min | Type | Max | Units |
| V(BR)CES | Collector-emitter breakdown voltage (VGE= 0) | 600 | V | ||
| VCE(sat) | Collector-emitter saturation voltage VGE=" 15" V, IC=" 12" A | 1.8 | 2.5 | V | |
| VGE(th) | Gate threshold voltage | 5.75 | V | ||
| ICES | Collector cut-off current (VGE = 0) VCE=" 600" V | 3.75 | 150 | µA | |
| IGES | Gate-emitter leakage current (VCE = 0) | ±100 | nA | ||
| gfs | Forward transconductance | 5 | S |