20N50 Transistor MOSFET N-Chanel, 500V, 20A
BD 5.500
Out of stock
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved Trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
Product Details
| TYPE | DESCRIPTION | SELECT ALL |
| Categories | Discrete Semiconductor Products | |
|---|---|---|
| Transistors - FETs, MOSFETs - Single | ||
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2942pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 250W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AC | |
| Package / Case | TO-247-3 | |
| Base Part Number | SIHG20 |