IG Electronics
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IRGP4063DPBF Power IGBT, 600V, 96A

Non-returnable
BD 12.000
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 

Features

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package

High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI

VCES = 100°C ICM ILM = 100°C IFM VGE 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)

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