MJE13007G Transistor, NPN, 400V, 8A
Non-returnable
BD 2.500
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
- SOA and switching applications
- Collector-base voltage (Vcbo = 700V)
- Emitter-base voltage (Vcbo = 9V)
Applications
Power Management, Motor Drive & Control, Industrial
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Product Details
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Current | 8 A | |
| Collector to Emitter Voltage | 400 V | |
| Configuration | Common Base | |
| Dimensions | 10.28 x 4.82 x 15.75 mm | |
| Emitter to Base Voltage | 9 V | |
| Height | 0.62" (15.75mm) | |
| Length | 0.404" (10.28mm) | |
| Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -65 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Number of Pins | 3 | |
| Operating Frequency | 140 MHz | |
| Package Type | TO-220AB | |
| Polarity | NPN | |
| Power Dissipation | 80 W | |
| Primary Type | Si | |
| Product Header | SWITCHMODE™ NPN Bipolar Power Transistor | |
| Resistance, Thermal, Junction to Case | 1.56 °C/W | |
| Series | SWITCHMODE Series | |
| Temperature Operating Range | -65 to +150 °C | |
| Transistor Type | NPN | |
| Type | Power | |
| Voltage, Breakdown, Collector to Emitter | 400 V | |
| Voltage, Collector to Emitter, Saturation | 3 V | |
| Voltage, Saturation, Base to Emitter | 1.6 V | |
| Width | 0.19" (4.82mm) |