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TIP3055 (NPN)

TIP3055 (NPN Transistor, 15A, 60V)

BD 0.900
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.

Characteristics of the TIP3055 bipolar transistor

  • Type - NPN
  • Collector-Emitter Voltage: 60 V
  • Collector-Base Voltage: 70 V
  • Emitter-Base Voltage: 7 V
  • Collector Current: 15 A
  • Collector Dissipation - 90 W
  • DC Current Gain (hfe) - 20 to 70
  • Transition Frequency - 3 MHz
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package - TO-247
  • Electrically Similar to the Popular 2N3055
  • Pb-Free Packages are Available (TIP3055G)

Key Features
  • Low collector-emitter saturation voltage
  • Complementary NPN - PNP transistors
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