TIP3055 (NPN Transistor, 15A, 60V)
BD 2.000
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.
Characteristics of the TIP3055 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 60 V
- Collector-Base Voltage: 70 V
- Emitter-Base Voltage: 7 V
- Collector Current: 15 A
- Collector Dissipation - 90 W
- DC Current Gain (hfe) - 20 to 70
- Transition Frequency - 3 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-247
- Electrically Similar to the Popular 2N3055
- Pb-Free Packages are Available (TIP3055G)
Key Features
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Lead Finish | Tin | |
| Maximum Collector Base Voltage | 100 V | |
| Maximum Collector Emitter Saturation Voltage | 3@3.3A@10A V | |
| Maximum Collector Emitter Voltage | 60 V | |
| Maximum DC Collector Current | 15 A | |
| Maximum Power Dissipation | 90000 mW | |
| Minimum DC Current Gain | 20@4A@4V | |
| Mounting | Through Hole | |
| Operating Temperature | -65 to 150 °C | |
| Pin Count | 3 | |
| Product Dimensions | 15.75 x 5.15 x 20.15 mm | |
| Supplier Package | TO-247 | |
| Type | NPN |