BC108 (NPN 25V, 150MHz, 600mW, 200mA Metal transistor)
BD 1.000
The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
A BC108 Transistor is an NPN (Negative-Positive-Negative) Bipolar Transistor: the most commonly used transistor configuration
The BC108 Collector is connected to the positive (+ve) supply via the load. NB: If the load is inductive i.e. has coil windings such as a relay, solenoid or motor, then it is usual to connect a diode across it to prevent the Back EMF from damaging the transistor. (Cathode to supply).
- Collector emitter voltage (Vce) of 25V
- Continuous collector current (Ic) of 200mA
- Power dissipation of 600mW
- Operating junction temperature range from -65°C to 200°C
- Collector emitter saturation voltage of 600mV at Ic="100mA
- DC current gain of 40 at Ic="10µA
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Product Details
Characteristics of the BC108 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 20 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.1 A
- Collector Dissipation - 0.3 W
- DC Current Gain (hfe) - 110 to 800
- Transition Frequency - 150 MHz
- Noise Figure - 2 dB
- Operating and Storage Junction Temperature Range -65 to +175 °C