NZT660 PNP Transistor, 3A, 60V
Non-returnable
BD 1.600
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Characteristics of the NZT660 bipolar transistor
- Type - PNP
- Collector-Emitter Voltage: -60 V
- Collector-Base Voltage: -80 V
- Emitter-Base Voltage: -5 V
- Collector Current: -3 A
- Collector Dissipation - 2 W
- DC Current Gain (hfe) - 100 to 300
- Transition Frequency - 75 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - SOT-223
- Type - PNP
- Collector-Emitter Voltage: -60 V
- Collector-Base Voltage: -80 V
- Emitter-Base Voltage: -5 V
- Collector Current: -3 A
- Collector Dissipation - 2 W
- DC Current Gain (hfe) - 100 to 300
- Transition Frequency - 75 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - SOT-223
Choose Quantity
Product Details
Specifications
| Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | 3 A |
| Maximum Collector Emitter Voltage | 60 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 2 W |
| Minimum DC Current Gain | 100 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | -80 V |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 100 MHz |
| Pin Count | 3 + Tab |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Dimensions | 6.7 x 3.7 x 1.7mm |
| Maximum Operating Temperature | +150 °C |
| Width | 3.7mm |
| Height | 1.7mm |
| Maximum Collector Emitter Saturation Voltage | -550 mV |
| Length | 6.7mm |
| Maximum Base Emitter Saturation Voltage | -1.25 V |