LL2705 Transistor MOSFET N-Chanel 55V, 5.2A
Non-returnable
BD 2.500
The IRLL2705TRPBF is a fifth generation N-channel power MOSFET that uses advanced processing techniques to achieve extremely low ignition resistance per silicone area.
This benefit combined with fast switching speed and robust device design provides extremely efficient and reliable operation.
The package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-up and placement as with other SOT or SOIC packages, but it has the added benefit of better thermal performance due to an expanded heat sink tab.
This benefit combined with fast switching speed and robust device design provides extremely efficient and reliable operation.
The package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-up and placement as with other SOT or SOIC packages, but it has the added benefit of better thermal performance due to an expanded heat sink tab.
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Product Details
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
6.7mm
Transistor Configuration
Single
Brand
Infineon
Maximum Continuous Drain Current
5.2 A
Package Type
SOT-223
Maximum Power Dissipation
2.1 W
Series
HEXFET
Mounting Type
Surface Mount
Minimum Operating Temperature
-55 °C
Width
3.7mm
Maximum Gate Threshold Voltage
2V
Height
1.7mm
Minimum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
40 mΩ
Maximum Drain Source Voltage
55 V
Pin Count
3 + Tab
Typical Gate Charge @ Vgs
32 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Channel Type
N
Maximum Gate Source Voltage
-16 V, +16 V