G4PC50F (Transistor IGBT Chip N-CH 600V, 70A)
BD 8.500
The IRG4PC50FPBF is an Insulated Gate Bipolar Transistor optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
Key Features
- Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
- Lead-Free
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Lead Finish | Matte Tin | |
| Max Processing Temp | 260 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 70 A | |
| Maximum Gate Emitter Voltage | ±20 V | |
| Mounting | Through Hole | |
| MSL Level | MSL 1 - Unlimited | |
| Pin Count | 3 | |
| Product Dimensions | 15.87 x 5.31 x 20.7 mm | |
| Supplier Package | TO-247AC |