FQP9N50C Trans MOSFET N-CH 500V 9A 3-Pin
BD 3.500
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Key Features
- 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 24 pF)
- 100% Avalanche Tested
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Gate Source Voltage | ±30 V | |
| Mounting | Through Hole | |
| Operating Temperature | -55 to 150 °C | |
| Product Dimensions | 10.1 x 4.7 x 9.4 mm | |
| RDS-on | 800@10V mOhm | |
| Supplier Package | TO-220AB | |
| Typical Fall Time | 64 ns | |
| Typical Rise Time | 65 ns | |
| Typical Turn-Off Delay Time | 93 ns | |
| Typical Turn-On Delay Time | 18 ns | |
| Voltage | 600 |