
BDX53CG (NPN 80V, 8A)
1.800BD
The 8 A, 80 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Key Features
- High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage@ 100 mAdc
VCEO(sus) = 80 Vdc (Min) - Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc - Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- These Devices are Pb−Free and are RoHS Compliant
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Product Details
Technical Attributes
Description | Value | |
---|---|---|
Configuration | Single | |
Lead Finish | Matte Tin | |
Maximum Base Emitter Saturation Voltage | 2.5@12mA@3A V | |
Maximum Collector Base Voltage | 80 V | |
Maximum Collector Cut-off Current | 200 uA | |
Maximum Collector Emitter Saturation Voltage | 2@12mA@3A V | |
Maximum Collector Emitter Voltage | 80 V | |
Maximum Emitter Base Voltage | 5 V | |
Minimum DC Current Gain | 750@3A@3V | |
Mounting | Through Hole | |
Peak DC Collector Current | 8 A | |
Pin Count | 3 | |
Product Dimensions | 10.28 x 4.82 x 9.28 mm | |
Supplier Package | TO-220AB | |
Type | NPN |