FQP7N80C Trans MOSFET N-CH 800V 6.6A 3-Pin
BD 3.500
This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Key Features
- 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A
- Low Gate Charge (Typ. 27 nC)
- Low Crss (Typ. 10 pF)
- 100% Avalanche Tested
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Maximum Gate Source Voltage | ±30 V | |
| Mounting | Through Hole | |
| Product Dimensions | 10.1 x 4.7 x 9.4 mm | |
| Supplier Package | TO-220AB | |
| Typical Fall Time | 60 ns | |
| Typical Rise Time | 100 ns | |
| Typical Turn-Off Delay Time | 50 ns | |
| Typical Turn-On Delay Time | 35 ns | |
| Voltage | 600 |