MJE3055T (Complementary Power Transistors)
BD 2.000
The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications.
- DC current gain (hfe = 20 minimum at Ic = 4A)
- Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic = 4A)
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Product Details
Features:
• Power dissipation-PD = 75W at TC = 25°C.
• DC current gain hFE = 20 (Minimum) at IC = 4.0A.
• VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.