
IRFIBC30, Transistor, MOSFET N-CH, 600V, 1.6A
Non-returnable
BD 3.000
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
- VDS: 600 V
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Product Details
Product Technical Specifications
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Package Width | 4.83(Max) |
Package Height | 16.12(Max) |
Package Length | 10.63(Max) |
Tab | Tab |
PCB changed | 3 |
Lead Shape | Through Hole |
Mounting | Through Hole |
Product Category | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 2.5 |
Maximum Drain Source Resistance (mOhm) | 2200@10V |
Typical Gate Charge @ Vgs (nC) | 31(Max)@10V |
Typical Gate Charge @ 10V (nC) | 31(Max) |
Typical Input Capacitance @ Vds (pF) | 660@25V |
Maximum Power Dissipation (mW) | 35000 |
Typical Fall Time (ns) | 14 |
Typical Rise Time (ns) | 13 |
Typical Turn-Off Delay Time (ns) | 35 |
Typical Turn-On Delay Time (ns) | 11 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Automotive | No |
Supplier Package | TO-220FP |
Standard Package Name | TO-220 |
Pin Count | 3 |
Military | No |