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IRFIBC30G

IRFIBC30G (Transistor MOSFET N-CH 600V 2.5A)

BD 3.000

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

Key Features
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
  • Dynamic dV/dt Rating
  • Low Thermal Resistance
  • Lead (Pb)-free Available
  • VDS: 600 V
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