STP65NF06 Trans MOSFET N-CH 60V 60A 3-Pin
BD 3.000
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Key Features
Standard level gate drive
100% avalanche tested
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Mounting | Through Hole | |
| Operating Temperature | -55 to 175 °C | |
| Product Dimensions | 10.4 x 4.6 x 9.15 mm | |
| RDS-on | 14@10V mOhm | |
| Supplier Package | TO-220 | |
| Typical Fall Time | 16 ns | |
| Typical Rise Time | 60 ns | |
| Typical Turn-Off Delay Time | 40 ns | |
| Typical Turn-On Delay Time | 15 ns | |
| Voltage | 600 |