2N4123 (Bipolar (BJT) Single Transistor, NPN, 40V, 250 MHz, 1.5W, 600mA)
BD 0.800
The 2N4123 is a silicon NPN Transistor, designed for use in audio amplifier and switching applications. Collector-emitter voltage at 40V and power dissipation at 625mW.
- Complement to NTE159
- 83.3°C/W Junction-to-case thermal resistance
- 200°C/W Junction-to-ambient thermal resistance
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Product Details
Characteristics of the 2N4123 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 30 V
- Collector-Base Voltage: 40 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.2 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 50 to 200
- Transition Frequency - 250 MHz
- Noise Figure - 6 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-92
- Electrically Similar to the Popular MPS4123