1N5821 Diode 30v, 3A
BD 0.400
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
•Extremely Low VF
•Low Power Loss/High Efficiency
•Low Stored Charge, Majority Carrier Conduction
•Shipped in plastic bags, 500 per bag
•Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number
•Pb-Free Packages are Available*
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