TIP102 (NPN 100V, 80W, 8A)
BD 1.200
The TIP102 is a 100V Silicon Epitaxial Base NPN Complementary Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Complementary to the TIP107
- Integrated anti-parallel collector-emitter diode
- Well-controlled hFE parameter for increased reliability
Applications
Industrial, Audio, Power Management, Motor Drive & Control
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Product Details
Characteristics of the TIP102 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 100 V
- Collector-Base Voltage: 100 V
- Emitter-Base Voltage: 5 V
- Collector Current: 8 A
- Collector Dissipation - 80 W
- DC Current Gain (hfe) - 1000 to 20000
- Operating and Storage Junction Temperature Range -65 to +150 °C
- Package - TO-220
- Pb-Free Packages are Available (TIP102G)