IRFS630B
BD 2.000
Type Designator: IRFS630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 43 nC
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
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