TIP35C Transistor, NPN, 100V, 25A, 125W
BD 2.000
The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications.
Key Features
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Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Lead Finish | Matte Tin | |
| Maximum Collector Base Voltage | 100 V | |
| Maximum Collector Emitter Saturation Voltage | 4@5A@25A V | |
| Maximum Collector Emitter Voltage | 100 V | |
| Maximum DC Collector Current | 25 A | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Power Dissipation | 125000 mW | |
| Minimum DC Current Gain | 25@1.5A@4V | |
| Mounting | Through Hole | |
| Operating Temperature | -65 to 150 °C | |
| Pin Count | 3 | |
| Product Dimensions | 15.75 x 5.15 x 20.15 mm | |
| Supplier Package | TO-247 | |
| Type | NPN |