IRFZ44N Transistor MOSFET, SMD, N-Chanel, 55V, 49A
BD 4.000
Out of stock
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Key Features
- Advanced Process Technology
- Surface Mount
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Max Processing Temp | 260 | |
| Maximum Continuous Drain Current | 49 A | |
| Maximum Drain Source Voltage | 55 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Mounting | Surface Mount | |
| MSL Level | MSL 1 - Unlimited | |
| Operating Temperature | -55 to 175 °C | |
| Product Dimensions | 10.67 x 9.65 x 4.83 mm | |
| RDS-on | 17.5@10V mOhm | |
| Supplier Package | D2PAK | |
| Typical Fall Time | 45 ns | |
| Typical Rise Time | 60 ns | |
| Typical Turn-Off Delay Time | 44 ns | |
| Typical Turn-On Delay Time | 12 ns | |
| Voltage | 600 |