GT20J301 N-CH Transistors IGBT 20A, 600V
Non-returnable
BD 2.500
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS . Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
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Product Details
Technical Specifications
Toshiba GT20J301 technical specifications, attributes, and parameters.
| Physical | |
|---|---|
| Mount | Through Hole |
| Number of Pins | 3 |
| Technical | |
| Collector Emitter Voltage (VCEO) | 600 V |
| Element Configuration | Single |
| Max Collector Current | 20 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Compliance | |
| Radiation Hardening | No |
| RoHS | Compliant |