2N3392 (Bipolar Transistor)
BD 0.800
Bipolar (BJT) Single Transistor, NPN, 50 V, 260 mW, 100 mA, 400 hFE
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Characteristics of the 2N3392 bipolar transistor
- Type - NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 25 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 150 to 300
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-92
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