40N60 Transistor IGBT Chip, N-Chanel, 600V, 75A
BD 8.500
The HGTG40N60A4 is a N-channel IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
- 1.7V Low saturation voltage @ IC = 40A
- 55ns Fall time @ TJ = 125°C
- 625W Total power dissipation @ TC = 25°C
Applications
Power Management, Maintenance & Repair
Choose Quantity
Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Lead Finish | Matte Tin | |
| Max Processing Temp | 260 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Gate Emitter Voltage | ?20 V | |
| Mounting | Through Hole | |
| Pin Count | 3 | |
| Product Dimensions | 15.87 x 4.82 x 20.82 mm | |
| Supplier Package | TO-247 |