20N60 Transistor IGBT Chip, N-Chanel, 600V, 40A
BD 5.000
Out of stock
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060/. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Key Features
- 40A, 600V at TC = 25 deg C
- 600 V Switching SOA Capability
- Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150 deg C
- Short Circuit Rated
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
Product Details
Technical Attributes
| Description | Value | |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Lead Finish | Matte Tin | |
| Max Processing Temp | 260 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Gate Emitter Voltage | ?20 V | |
| Mounting | Through Hole | |
| Pin Count | 3 | |
| Product Dimensions | 15.87 x 4.82 x 20.82 mm | |
| Supplier Package | TO-247 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country Of Origin: | China |
| ECCN: | EAR99 |